800G/1.6T Thin Film LiNbO3 Modulator Chip（DR8）
Series:
ORI-MZM-T-BW is the thermal tuning version, whose phase shift is tuned by micron heaters integrated on chip. Compared to traditional LN modulators, the heater version could maintain a lot more stable bias point throughout lifetime of the device. The device is a hermetic sealing package with internal optical power, which save more space size for the end user.
Product Introduction：
800G/1.6T integrated chip based on thin-film lithium niobate. Driven single-ended by a DSP or EAM driver.
Integrate the following components:
1. Integrated 1x8 beam splitter (DR8)
2. Eight-way MZM modulator
3. Input and output optical power monitoring PD
4. Mode spot conversion SSC
5.On-chip 50 ohm matching resistor
Scope of Application：
8x100G, 8x200G Data Center Applications
Specification：
|
Chip Size（DR8） |
5×11.5mm |
|
Vpp requirements（ER>4dB） |
1.2V |
|
RF bandwidth |
>67GHz |
|
Single MZM insertion loss |
<4.5dB |
|
extinction ratio |
>20dB |
|
half-wave voltage |
<2.8V(@100khz) |
Keyword:
intensity modulator
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