10G XGS PON LD

ORI-MZM-T-BW is the thermal tuning version, whose phase shift is tuned by micron heaters integrated on chip. Compared to traditional LN modulators, the heater version could maintain a lot more stable bias point throughout lifetime of the device. The device is a hermetic sealing package with internal optical power, which save more space size for the end user.

ORI-DFB-1270P-10

10G XGS PON LD

Highlights:

● 1270 nm DFB Laser

● Direct modulation up to 10 Gbps

● High Temperature Operation: -40 to 85 °C

 

Applications:

10G EPON, XGS PON

 

Key parameters:

No.

Parameter

Conditions

Symbol

Min

Typ

Max

Unit

1

Threshold Current

25°C, CW

85°C, CW

Ith

-

10

-

14

25

mA

2

Slope Efficiency

25°C, CW, Ith+20mA

85°C, CW, Ith+20mA

SE

0.4

0.25

0.45

0.28

-

W/A

3

Optical Output Power

25°C, Ith+20 mA

85°C, Ith+20 mA

Po

8

4

9

5

-

mW

4

Laser Forward Voltage

25°C, Ith+20 mA

Vf

-

1.25

1.5

V

5

Resistance

25°C, CW, Ith+20 mA

Rs

-

12

15

Ω

6

Center Wavelengths

25°C, CW, Ith+20 mA

λc

λc-2

λc

λc+2

nm

7

Side Mode Suppression ratio

CW, Ith+20 mA

SMSR

35

45

-

dB

8

Modulation Bandwidth

25°C, CW, Ith+20 mA

85°C, CW, Ith+20 mA

BW

12

8

16

12

-

GHz

9

Kink

Range[10,70]mA, CW

 

-

-

20

%

10

Temperature Dependence of Wavelength

CW

Δλ/ΔT

 

0.09

 

nm/deg

11

20dB Width

CW, Ith+20 mA

Δλ

 

 

1

nm

12

Far Field (Vertical)

Ith+20 mA, CW

θv

 

25

 

deg

13

Far Field (Horizontal)

Ith+20 mA, CW

θh

 

36

 

deg

 

Product Dimensions:

Notes: Scale bars are in units of μms.

A- laser electrode;

B- laser front facet marking;

C- laser front facet;

D- testing electrode, neglected during normal operation.

Keyword:

10G XGS PON LD

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