1.6T DR8 Thin-film Lithium Niobate Mach-Zehnder Modulator Chip

ORI-MZM-T-BW is the thermal tuning version, whose phase shift is tuned by micron heaters integrated on chip. Compared to traditional LN modulators, the heater version could maintain a lot more stable bias point throughout lifetime of the device. The device is a hermetic sealing package with internal optical power, which save more space size for the end user.

Highlights

● Based on cutting-edge thin-film Lithium Niobate (TFLN) technology;

● Low Vpi for driverless operation;

● Small formfactor

● Low insertion loss; 

● Spot-size inverters integrated.

● Support single LD input or dual LD input.

● Ori-chip’s proprietary design, designed and fabricated by Ori-Chip.

 

key parameters

No.

Parameter

Symbol

Min

Max

Unit

1.

Storage temperature

Ts

-40

85

°C

2.

Storage Relative humidity

RH

0

90

%

3.

Operating temperature

Top

-10

85

℃

4.

RF electrode maximum Voltage

VRF

-

4

V

5.

Heater maximum current

Ihtr

-

30

mA

6.

Heater maximum voltage

Vhtr

-

8

V

 

No.

Parameter

Symbol

Min

Typ

Max

Unit2.

1.

RF Vpi

Vpi_RF

-

2.8

3

V

2.

Insertion loss *

IL

-

-

15.5

dB

3.

IL Uniformity

DIL

 

 

1.5

dB

4.

Electro-optical 3-dB Bandwidth

BW

67

-

-

GHz

5.

Characteristic impedance

Zc

45

50

55

Ohm

6.

Heater resistance

Rhtr

180

220

260

Ohm

7.

Thermal tuning Ppi

Ppi_th

-

50

60

mW/π

8.

Wavelength range

λ

1300

1310

1320

nm

9.

Optical Extinction ratio

OER

20

25

-

dB

10.

Optical Return Loss

RL

26

-

-

dB

11.

Input and output mode diameter

D

3.5

4

-

μm

12.

Input MPD splitter ratio

Rin

0.5

1.5

2

%

13.

Output MPD splitter ratio

Rout

15

20

25

%

* Modulation loss not included. Assume 1.25dB coupling loss per facet, 9.5 dB splitting loss. Without modulation, at in-phase condition, 3dB modulator loss. 1.25*2+9.5+3=15 dB.

Keyword:

Intensity Modulator

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