10G XGS PON LD

ORI-DFB-1270P-10

Highlights:

● 1270 nm DFB Laser

● Direct modulation up to 10 Gbps

● High Temperature Operation: -40 to 85 °C

10G EPON, XGS PON

No.	Parameter	Conditions	Symbol	Min	Typ	Max	Unit
1	Threshold Current	25°C, CW 85°C, CW	I_th	-	10 -	14 25	mA
2	Slope Efficiency	25°C, CW, I_th+20mA 85°C, CW, I_th+20mA	SE	0.4 0.25	0.45 0.28	-	W/A
3	Optical Output Power	25°C, I_th+20 mA 85°C, I_th+20 mA	P_o	8 4	9 5	-	mW
4	Laser Forward Voltage	25°C, I_th+20 mA	V_f	-	1.25	1.5	V
5	Resistance	25°C, CW, I_th+20 mA	R_s	-	12	15	Ω
6	Center Wavelengths	25°C, CW, I_th+20 mA	λ_c	λ_c-2	λ_c	λ_c+2	nm
7	Side Mode Suppression ratio	CW, I_th+20 mA	SMSR	35	45	-	dB
8	Modulation Bandwidth	25°C, CW, I_th+20 mA 85°C, CW, I_th+20 mA	BW	12 8	16 12	-	GHz
9	Kink	Range[10,70]mA, CW		-	-	20	%
10	Temperature Dependence of Wavelength	CW	Δλ/ΔT		0.09		nm/deg
11	20dB Width	CW, I_th+20 mA	Δλ			1	nm
12	Far Field (Vertical)	I_th+20 mA, CW	θ_v		25		deg
13	Far Field (Horizontal)	I_th+20 mA, CW	θ_h		36		deg

Notes: Scale bars are in units of μms.

A- laser electrode;

B- laser front facet marking;

C- laser front facet;

D- testing electrode, neglected during normal operation.

Keyword:

10G XGS PON LD