1.6T DR8 Thin-film Lithium Niobate Mach-Zehnder Modulator Chip
Highlights
● Based on cutting-edge thin-film Lithium Niobate (TFLN) technology;
● Low Vpi for driverless operation;
● Small formfactor
● Low insertion loss;
● Spot-size inverters integrated.
● Support single LD input or dual LD input.
● Ori-chip’s proprietary design, designed and fabricated by Ori-Chip.
key parameters
|
No. |
Parameter |
Symbol |
Min |
Max |
Unit |
| 1. |
Storage temperature |
Ts |
-40 |
85 |
°C |
| 2. |
Storage Relative humidity |
RH |
0 |
90 |
% |
| 3. |
Operating temperature |
Top |
-10 |
85 |
℃ |
| 4. |
RF electrode maximum Voltage |
VRF |
- |
4 |
V |
| 5. |
Heater maximum current |
Ihtr |
- |
30 |
mA |
| 6. |
Heater maximum voltage |
Vhtr |
- |
8 |
V |
|
No. |
Parameter |
Symbol |
Min |
Typ |
Max |
Unit2. |
| 1. |
RF Vpi |
Vpi_RF |
- |
2.8 |
3 |
V |
| 2. |
Insertion loss * |
IL |
- |
- |
15.5 |
dB |
| 3. |
IL Uniformity |
DIL |
|
|
1.5 |
dB |
| 4. |
Electro-optical 3-dB Bandwidth |
BW |
67 |
- |
- |
GHz |
| 5. |
Characteristic impedance |
Zc |
45 |
50 |
55 |
Ohm |
| 6. |
Heater resistance |
Rhtr |
180 |
220 |
260 |
Ohm |
| 7. |
Thermal tuning Ppi |
Ppi_th |
- |
50 |
60 |
mW/π |
| 8. |
Wavelength range |
λ |
1300 |
1310 |
1320 |
nm |
| 9. |
Optical Extinction ratio |
OER |
20 |
25 |
- |
dB |
| 10. |
Optical Return Loss |
RL |
26 |
- |
- |
dB |
|
11. |
Input and output mode diameter |
D |
3.5 |
4 |
- |
μm |
| 12. |
Input MPD splitter ratio |
Rin |
0.5 |
1.5 |
2 |
% |
| 13. |
Output MPD splitter ratio |
Rout |
15 |
20 |
25 |
% |
* Modulation loss not included. Assume 1.25dB coupling loss per facet, 9.5 dB splitting loss. Without modulation, at in-phase condition, 3dB modulator loss. 1.25*2+9.5+3=15 dB.
Keyword:
Intensity Modulator
