800G/1.6T Thin-Film LiNbO3 Modulator Chip (DR8)
Category:
800G/1.6T Thin-Film LiNbO3 Modulator Chip (DR8)
Product Introduction:
An 800G/1.6T integrated chip based on thin-film lithium niobate. It employs single-ended driving via either a DSP or an EAM driver.
Integrates the following components:
1. Integrated 1x8 beam splitter (DR8)
2. Eight-Channel MZM Modulator
3. Input and output optical power monitoring PD
4. Modulation-Spot Conversion SSC
5. On-chip 50-ohm matching resistor
Scope of application:
8x100G, 8x200G data center applications
Key Metrics:
|
Chip size (DR8) |
5×11.5mm |
|
Vpp requirement (ER > 4 dB) |
1.2 V |
|
RF bandwidth |
> 67 GHz |
|
Insertion loss of a single MZM |
< 4.5 dB |
|
Extinction ratio |
> 20 dB |
|
Half-wave voltage |
< 2.8 V (@100 kHz) |
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