Intensity Modulator

Thin-film Lithium Niobate MZ Modulator


Intensity Modulator

Highlights:

● Based on state-of-the-art thin-film lithium niobate technology

● Very small footprint: 1.5-inch long

● Low driving voltage: 3V Vpi

● High bandwidth: 20/40 GHz 3-dB bandwidth

● Low insertion loss: typically 3.5dB

● Long-time stability: modulator phase stable over-life

 

Description

Based on state-of-the-art Lithium Niobate on insulator (LNOI) technology, this intensity modulator inherits most of the advantages of traditional lithium niobate modulators, and has a miniature form factor, low driving voltage and low loss.

 

We have two versions for this product, ORI-MZM-20-T is the thermal tuning version, whose phase shift is tuned by micron heaters integrated on chip. ORI-MZM-20-V is the voltage tuning version. Compared to traditional LN modulators, the heater version could maintain a lot more stable bias point throughout lifetime of the device.

 

Applications

RoF

Microwave links

 

Key parameters

Parameter

Symbol

Min

Typ

Max

Unit

RF Vπ @ 1kHz

Vpi_RF

 

3.3

3.5

V

RF Vπ @ 1GHz

Vpi_RF

 

 

4

V

Electro-optical 3-dB Bandwidth

BW

20*

30

 

GHz

Electrical return loss (f<20GHz*)

S11

 

 

-10

dB

Characteristic impedance

Zc

 

50

 

Ohm

* 40GHz version is under development, and will be out in Q2 2022.

 

 

Parameter

Symbol

Min

Typ

Max

Unit

Insertion loss

IL

 

3.5

4.5

dB

Electro-optical Bandwidth

BW

 

20/40

 

GHz

DC Extinction ratio

ER

20

 

 

dB

Wavelength range

λ

1527

 

1567

nm

PD responsivity*

R

0.1

 

0.5

A/W

Optical return loss

RL

 

 

-30

dBm

* PD responsivity is defined as max PD photocurrent over max output optical power, with fixed input.

 

Performance

ORI-MZM-20-* Typical S21 Curve (40GHz version will be out very soon…)

ORI-MZM-20-* Typical S11 Curve (40GHz version will be out very soon…)

 

Product Dimensions

  

Notes: Scale bars are in unit of mm.

Keyword:

Intensity Modulator

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